PART |
Description |
Maker |
AN1021 |
A CONTROLLER TO GAIN NVRAM FUNCTIONALITY FROM TWO 128K X16 BLOCKS OF SRAM
|
SGS Thomson Microelectronics
|
CA500A126 CA500A101 CA500A111 CA500A112 CA500A117 |
Serial real-time clock with 44 bytes NVRAM and reset 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 5V or 3V NVRAM supervisor for up to two LPSRAMs 5V or 3V NVRAM supervisor for up to 8 LPSRAMs Serial real-time clock 逻辑IC
|
TE Connectivity, Ltd.
|
M40SZ100WMQ6F |
3 V NVRAM supervisor for LPSRAM
|
ST Microelectronics
|
AN1011 |
BATTERY TECHNOLOGY USED IN NVRAM PRODUCTS FROM ST
|
SGS Thomson Microelectronics
|
DS1249Y-70 DS1249Y-100-IND DS1249Y-70-IND DS1249AB |
NVRAM (Battery Based) NVRAM中(基于电池
|
Maxim Integrated Products, Inc.
|
DS1245ABL-120 DS1245ABL-120-IND DS1245YL-120-IND D |
NVRAM (Battery Based) NVRAM中(基于电池
|
Abracon, Corp.
|
FM1208-100DC FM1208-150PC |
NVRAM (Ferroelectric Based) NVRAM中(基于铁电
|
Samtec, Inc. Ramtron International, Corp.
|
FM25040-C FM25040-PS |
NVRAM (Ferroelectric Based) NVRAM中(基于铁电
|
Ramtron International, Corp.
|
DS1245Y-100-IND DS1245Y-120-IND DS1245YP-70 DS1245 |
NVRAM (Battery Based) NVRAM中(基于电池
|
Maxim Integrated Products, Inc.
|
M48Z512A-70PM1NBSP M48Z512A-70PM1 |
NVRAM (Battery Based) From old datasheet system
|
ST Microelectronics
|
M41ST85 M41ST85W M41ST85WMH M41ST85WMH6 M41ST85WMH |
5.0 OR 3.0V, 512 bit 64 x 8 SERIAL RTC and NVRAM SUPERVISOR
|
STMicroelectronics
|
M41T56-11 |
Serial real-time clock (RTC) with 56 bytes NVRAM
|
STMicroelectronics
|